I-BOM Icaphuna Izingxenye Ze-Electronic Umshayeli IC Chip IR2103STRPBF

Izimfanelo Zomkhiqizo

Amadokhumenti Nemidiya

Izigaba Zemvelo Nokuthekelisa

Abashayeli Bamasango

Umshayeli wesango isikhulisi samandla esamukela okokufaka kwamandla aphansi esivela kusilawuli se-IC futhi sikhiqize okokufaka kwedrayivu yamanje ephezulu yesango le-transistor enamandla amakhulu njenge-IGBT noma i-MOSFET yamandla.Abashayeli besango banganikezwa nge-chip noma njengemojula ehlukile.Empeleni, umshayeli wesango uqukethe i-level shifter ehlanganiswe ne-amplifier.I-IC yomshayeli wesango isebenza njengesixhumi esibonakalayo phakathi kwamasignali okulawula (izilawuli zedijithali noma ze-analog) kanye nokushintsha kwamandla (IGBTs, MOSFETs, SiC MOSFETs, kanye nama-GaN HEMTs).Isixazululo esididiyelwe somshayeli wesango sinciphisa ubunkimbinkimbi bomklamo, isikhathi sokuthuthukiswa, ibhili yezinto zokwakha (i-BOM), nendawo yebhodi kuyilapho kuthuthukisa ukwethembeka phezu kwezixazululo zesango ezisetshenziswa ngokusobala.

Umlando

Ngo-1989, i-International Rectifier (IR) yethula umkhiqizo wokuqala womshayeli wesango le-HVIC le-monolithic, ubuchwepheshe besekethe ehlanganisiwe ye-high-voltage (HVIC) busebenzisa izakhiwo ezinelungelo lobunikazi neziphathelene nezakhiwo ze-monolithic ezihlanganisa i-bipolar, i-CMOS, kanye namadivayisi angemuva e-DMOS anamandla okuqhekeka angaphezu kuka-700 V kanye no-1400. V yokusebenza kwe-offset voltages engu-600 V kanye no-1200 V.[2]

Ngokusebenzisa lobu buchwepheshe be-HVIC obunamasignali axubile, womabili amasekhethi okushintsha izinga lamandla kagesi aphezulu kanye namasekhethi e-analog ane-voltage ephansi kanye namasekhethi edijithali angasetshenziswa.Ngekhono lokubeka i-high-voltage circuitry ('emthonjeni' owenziwe izindandatho ze-polysilicon), 'engakwazi 'ukuntanta' 600 V noma 1200 V, ku-silicon efanayo kude nawo wonke amanye ama-low-voltage circuitry, ohlangothini oluphezulu. amandla ama-MOSFET noma ama-IGBT akhona kuzihloko eziningi ezidumile zesekethe engaxhunyiwe ku-inthanethi njengembabala, i-synchronous boost, i-half-bridge, ibhuloho eligcwele kanye nesigaba sesithathu.Abashayeli besango le-HVIC abanokushintsha okuntantayo bafaneleka kahle kuma-topology adinga ukulungiselelwa kohlangothi oluphezulu, uhhafu webhuloho, kanye nezigaba ezintathu.[3]

Inhloso

Ngokuphambene nei-bipolar transistors, ama-MOSFET awadingi ukufaka amandla njalo, inqobo nje uma engavulwa noma evaliwe.Isango elilodwa ele-electrode le-MOSFET lakha ai-capacitor(i-gate capacitor), okumele ishajwe noma ikhishwe isikhathi ngasinye lapho i-MOSFET ivuliwe noma ivaliwe.Njengoba i-transistor idinga i-voltage yesango elithile ukuze ivuleke, i-capacitor yesango kufanele ikhokhiswe okungenani i-voltage yesango edingekayo ukuze i-transistor ivulwe.Ngokufanayo, ukuze ucime i-transistor, le nkokhelo kufanele ilahlwe, okungukuthi i-capacitor yesango kufanele ikhishwe.

Uma i-transistor ivuliwe noma ivaliwe, ayishintshi ngokushesha ukusuka kokungaqhubeki kuya esimweni sokuqhuba;futhi ingase isekele okwesikhashana kokubili amandla kagesi aphezulu futhi iqhube amandla aphezulu.Ngakho-ke, lapho isango lamanje lisetshenziswa ku-transistor ukuyibangela ukuthi ishintshe, kukhiqizwa inani elithile lokushisa elinganele, kwezinye izimo, ukucekela phansi i-transistor.Ngakho-ke, kuyadingeka ukugcina isikhathi sokushintsha sifushane ngangokunokwenzeka, ukuze kuncishisweukushintsha ukulahlekelwa[de].Izikhathi zokushintsha ezijwayelekile zikububanzi bama-microsecond.Isikhathi sokushintsha se-transistor silingana ngokuphambene nenani leokwamanjeejwayele ukushaja isango.Ngakho-ke, ukushintsha imisinga kuvame ukudingeka ebangeni lamakhulu amaninganaama-milliamperes, noma ngisho kububanzi beama-ampere.Ukuze uthole ama-voltage ajwayelekile wesango acishe abe ngu-10-15V, amaninganaama-wattsamandla angase adingeke ukuze ushayele iswishi.Uma amaza amakhulu eshintshwa ngamaza aphezulu, isbIziguquli ze-DC-to-DCnoma enkuluizinjini zikagesi, ama-transistors amaningi ngezinye izikhathi ahlinzekwa ngokuhambisana, ukuze anikeze ama-switching currents aphezulu ngokwanele namandla okushintsha.

Isiginali yokushintsha ye-transistor ivamise ukukhiqizwa isekethe enengqondo noma ai-microcontroller, okunikeza isignali yokuphumayo ngokuvamile ekhawulelwe kuma-milliamperes ambalwa wamanje.Ngakho-ke, i-transistor eshayelwa ngokuqondile isignali enjalo ingashintsha kancane kakhulu, nokulahlekelwa kwamandla aphezulu ngokufanayo.Ngesikhathi sokushintsha, i-capacitor yesango ye-transistor ingase idonse okwamanje ngokushesha kangangokuthi ibangele ukukhishwa kwamanje kumjikelezo we-logic noma i-microcontroller, okubangela ukushisa ngokweqile okuholela emonakalweni unomphela noma ngisho nokubhujiswa okuphelele kwe-chip.Ukuvimbela lokhu kungenzeki, umshayeli wesango unikezwa phakathi kwesiginali yokuphuma kwe-microcontroller kanye ne-transistor yamandla.

Amaphampu wokushajazivame ukusetshenziswa kuH-Amabhulohoemaceleni aphezulu abashayeli besango elishayela ohlangothini oluphezulu lwe-n-channelamandla MOSFETsfuthiI-IGBTs.Lawa madivayisi asetshenziswa ngenxa yokusebenza kwawo okuhle, kodwa adinga i-voltage yesango lokushayela ama-volts ambalwa ngaphezu kwesitimela samandla.Lapho indawo emaphakathi yebhuloho elinguhhafu yehla i-capacitor ishajwa nge-diode, futhi lokhu kushaja kusetshenziselwa ukushayela kamuva isango lesango le-FET elihlangothini oluphakeme amavolthi ambalwa ngaphezu komthombo noma i-emitter pin's voltage ukuze uyikhanyise.Leli su lisebenza kahle inqobo nje uma ibhuloho lishintshwa njalo futhi ligwema inkimbinkimbi yokuthi kudingeke ukuthi kusetshenziswe ugesi ohlukile futhi livumela ukuthi izisetshenziswa ezisebenza kahle kakhulu ze-n-channel zisetshenziselwe kokubili amaswishi aphezulu naphansi.