I-IPD042P03L3G BTS5215LAUMA1 IC Chip Ingxenye Entsha Yezobuchwepheshe

I-IPD042P03L3G BTS5215LAUMA1 IC Chip Isithombe Esisha Sesici Sogesi Esifakiwe

incazelo emfushane:

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-IPD042P03L3 G
Imodi yokuthuthukisa isiteshi se-P-Field-Effect Transistor (FET), -30 V, D-PAK
Imindeni ye-Infineon ethuthuke kakhulu ye-Opti MOS™ ihlanganisa amandla we-p-channel MOSFET.Le mikhiqizo ihlangabezana ngokuqhubekayo nekhwalithi ephezulu kanye nezidingo zokusebenza ezicacisweni ezibalulekile zokwakheka kwesistimu yamandla njengokumelana nesifunda kanye nenani lezimpawu zokufaneleka.

Isifinyezo Sezici
Imodi yokuthuthukisa
Izinga elinengqondo
I-avalanche ilinganiselwe
Ukushintsha ngokushesha
I-Dv/dt ilinganiselwe
I-Pb-free lead-plating
I-RoHS iyathobela, i-Halogen-free
Ifaneleke ngokuya nge-AEC Q101
Izinhlelo zokusebenza ezingaba khona
Imisebenzi Yokuphatha Amandla
Ukulawulwa kwezimoto
Ishaja engaphakathi
I-DC-DC
Umthengi
Abahumushi bezinga elinengqondo
Abashayeli besango le-MOSFET Amandla
Ezinye izinhlelo zokusebenza zokushintsha

Imininingwane

Isibaluli Somkhiqizo	Isibaluli senani
Umkhiqizi:	I-Infineon
Isigaba somkhiqizo:	I-MOSFET
I-RoHS:	Imininingwane
Ubuchwepheshe:	Si
Isitayela Sokukhweza:	I-SMD/SMT
Iphakheji / Ikesi:	KUYA-252-3
I-Transistor Polarity:	Isiteshi se-P
Inombolo Yeziteshi:	Isiteshi esingu-1
I-Vds – I-Drain-Source Breakdown Voltage:	30 v
I-Id - Ukudonsa Okuqhubekayo Kwamanje:	70 A
I-Rds On - Ukumelana Nomthombo Wokudonsa:	3.5 mOhm
I-Vgs – I-Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg - Ukukhokhiswa kwesango:	175 nc
Izinga Lokushisa Eliphansi Lokusebenza:	- 55 C
Ubukhulu Bezinga Lokushisa Lokusebenza:	+ 175 C
I-Pd - Ukuchithwa kwamandla:	150 W
Imodi yesiteshi:	Ukuthuthukisa
Igama lokuhweba:	I-OptiMOS
Ukupakishwa:	I-reel
Ukupakishwa:	Sika Tape
Ukupakishwa:	I-MouseReel
Ibhrendi:	I-Infineon Technologies
Ukucushwa:	Awushadile
Isikhathi sokuwa:	22 ns
Phambili Transconductance – Min:	65S
Ubude:	2.3 mm
Ubude:	6.5 mm
Uhlobo Lomkhiqizo:	I-MOSFET
Isikhathi Sokuvuka:	awu 167ns
Uchungechunge:	I-OptiMOS P3
Inani Lephakethe Lefekthri:	2500
Isigaba esingaphansi:	Ama-MOSFET
Uhlobo lwe-Transistor:	1 P-Channel
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala:	awu 89ns
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile:	21 ns
Ububanzi:	6.22 mm
Ingxenye # Iziteketiso:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Isisindo Seyunithi:	0.011640 oz