IPD068P03L3G insizakalo entsha yoqobo ye-Electronic Components IC chip MCU BOM isevisi esitokweni IPD068P03L3G
Izimfanelo Zomkhiqizo
UHLOBO | DESCRIPTION |
Isigaba | Imikhiqizo ye-Discrete Semiconductor |
Mfr | I-Infineon Technologies |
Uchungechunge | I-OptiMOS™ |
Iphakheji | I-Tape & Reel (TR) Cut Tape (CT) I-Digi-Reel® |
Isimo somkhiqizo | Iyasebenza |
Uhlobo lwe-FET | Isiteshi se-P |
Ubuchwepheshe | I-MOSFET (Metal oxide) |
I-Drain to Source Voltage (Vdss) | 30 v |
Okwamanje – Ukudonsa Okuqhubekayo (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
I-Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
Vgs(th) (Ubukhulu) @ Id | 2V @ 150µA |
Ukushaja kwesango (Qg) (Ubukhulu) @ Vgs | 91 nC @ 10 V |
I-Vgs (Ubuningi) | ±20V |
Amandla Wokufaka (Ciss) (Ubukhulu) @ Vds | 7720 pF @ 15 V |
Isici se-FET | - |
Ukuchithwa kwamandla (Ubukhulu) | 100W (Tc) |
Izinga Lokushisa Lokusebenza | -55°C ~ 175°C (TJ) |
Uhlobo Lokukhweza | INtaba Engaphezulu |
Iphakheji Yedivayisi Yomhlinzeki | PG-TO252-3 |
Iphakheji / Ikesi | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Inombolo Yomkhiqizo Eyisisekelo | IPD068 |
Amadokhumenti Nemidiya
UHLOBO LOKUSEBENZA | LINK |
Datasheets | I-IPD068P03L3 G |
Eminye Imibhalo Ehlobene | Ingxenye Inombolo Umhlahlandlela |
Umkhiqizo Ofakiwe | Amasistimu Wokucubungula Idatha |
I-HTML Datasheet | I-IPD068P03L3 G |
Amamodeli we-EDA | IPD068P03L3GATMA1 ngu-Ultra Librarian |
Izigaba Zemvelo Nokuthekelisa
ISIQINISEKISO | DESCRIPTION |
Isimo se-RoHS | I-ROHS3 Iyahambisana |
Izinga Lokuzwela Komswakama (MSL) | 1 (Okungenamkhawulo) |
FIKA Isimo | FIKA Ungathintekile |
ECCN | I-EAR99 |
HTSUS | 8541.29.0095 |
Izinsiza Ezengeziwe
ISIQINISEKISO | DESCRIPTION |
Amanye Amagama | I-IPD068P03L3GATMA1DKR I-IPD068P03L3GATMA1-ND SP001127838 Idatha ye-IPD068P03L3GATMA1CT Idatha ye-IPD068P03L3GATMA1TR |
Iphakheji Elijwayelekile | 2,500 |
I-Transistor
I-transistor iyi-aidivayisi ye-semiconductorwawuvamisekhulisanomashintshaamasignali kagesi kanyeamandla.I-transistor ingenye yezakhiwo eziyisisekelo zesimanjeelectronics.[1]Yakhiwaimpahla ye-semiconductor, ngokuvamile nabathathuamatheminaliukuze kuxhunywe isekethe ye-elekthronikhi.Ai-voltagenomaokwamanjeesetshenziswa kupheya eyodwa yamatheminali e-transistor ilawula i-current ngenye ipheya yamatheminali.Ngenxa yokuthi amandla alawulwayo (okukhiphayo) angaba phezulu kunamandla okulawula (okokufaka), i-transistor ingakhulisa isignali.Amanye ama-transistors apakishwa ngawodwana, kodwa amaningi atholakala eshumekwe kuwoizifunda ezihlanganisiwe.
I-Austria-Hungary isazi sesayensi yemvelo UJulius Edgar Lilienfelduphakamise umqondo wokuthi ai-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakha idivayisi esebenzayo ngaleso sikhathi.[2]Umshini wokuqala osebenzayo owawuzokwakhiwa kwakuyi-i-point-contact transistoryasungulwa ngo-1947 yizazi zefiziksi zaseMelikaUJohn BardeenfuthiWalter Brattainngenkathi usebenza ngaphansiUWilliam ShockleykweBell Labs.Bobathathu bahlanganyela ngo-1956Umklomelo KaNobel kuPhysicsimpumelelo yabo.[3]Uhlobo olusetshenziswa kakhulu lwe-transistor yi-metal-oxide-semiconductor field-effect transistor(MOSFET), eyasungulwa nguMohamed AtallafuthiDawon KahngeBell Labs ngo-1959.[4][5][6]Ama-Transistors aguqule umkhakha we-electronics, futhi avula indlela encane futhi eshibhileimisakazo,izibali, futhiamakhompyutha, phakathi kwezinye izinto.
Ama-transistors amaningi enziwe ahlanzekile kakhului-silicon, futhi abanye kusukelai-germanium, kodwa ngezinye izikhathi kusetshenziswa ezinye izinto ze-semiconductor.I-transistor ingaba nohlobo olulodwa kuphela lwesithwali sokushaja, ku-transistor enemiphumela yasendle, noma ingaba nezinhlobo ezimbili zezinkampani zokushajai-bipolar junction transistoramadivaysi.Uma kuqhathaniswa nei-vacuum tube, ama-transistors ngokuvamile mancane futhi adinga amandla amancane ukuze asebenze.Amashubhu athile evacuum anezinzuzo ngaphezu kwama-transistors kumaza okusebenza aphezulu kakhulu noma ama-voltage aphezulu okusebenza.Izinhlobo eziningi zama-transistors zenziwa ekucacisweni okujwayelekile ngabakhiqizi abaningi.