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imikhiqizo

I-SN74CB3Q3245RGYR 100% I-DC Entsha & Yoqobo Iya ku-DC Converter & Ukushintsha Isilawuli Chip

I-SN74CB3Q3245RGYR 100% Okusha & Kwangempela kwe-DC kuya ku-DC Isiguquli & Ukushintsha Isilawuli Sesithombe Esifakiwe
  • I-SN74CB3Q3245RGYR 100% I-DC Entsha & Yoqobo Iya ku-DC Converter & Ukushintsha Isilawuli Chip

incazelo emfushane:

I-SN74CB3Q3245 iyiswishi yebhasi ye-FET enomkhawulokudonsa ophezulu esebenzisa iphampu yokushaja ukuphakamisa ugesi wesango le-pass transistor, ihlinzeka ukumelana okuphansi nokuphansi kwe-ON-state (ron).Ukumelana nesimo se-ON-state okuphansi nokuyisicaba kuvumela ukubambezeleka okuncane kokusakazeka futhi kusekela ukushintshwa kwesitimela ukuya kusitimela kumachweba okufakwayo/okuphumayo kwedatha (I/O).Idivayisi iphinde ibe nomthamo wedatha ye-I/O ephansi ukunciphisa ukulayisha okunamandla kanye nokuhlanekezelwa kwesignali ebhasini ledatha.Idizayinelwe ngokuqondile ukusekela izinhlelo zokusebenza ezinomkhawulokudonsa ophezulu, i-SN74CB3Q3245 inikeza isixazululo esibonakalayo esilungiselelwe kahle esilungele ukuxhumana kwe-broadband, amanethiwekhi, kanye nezinhlelo zekhompuyutha ezidinga idatha.


Landa i-Datesheet

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izimfanelo Zomkhiqizo

UHLOBO IFANEKISA
isigaba Isishintshi sesignali, i-multiplex, i-decoder
umkhiqizi Texas Instruments
uchungechunge 74CB
ukugoqa Amaphakheji we-tape and rolling (TR)

Iphakheji ye-insulating tape (CT)

I-Digi-Reel®
Isimo somkhiqizo Iyasebenza
uhlobo Ukushintshwa kwebhasi
isifunda 8 x 1:1
Isifunda esizimele 1
Okwamanje - Okukhiphayo okuphezulu, okuphansi -
Umthombo wokunikezwa kwamandla kagesi Ukunikezwa kwamandla okukodwa
I-Voltage - Ukunikezwa kwamandla 2.3V ~ 3.6V
Izinga lokushisa lokusebenza -40°C ~ 85°C
Uhlobo lokufaka Uhlobo lwe-adhesive ebusweni
Iphakheji/Izindlu 20-VFQFN iphedi eveziwe
I-encapsulation yengxenye yomthengisi 20-VQFN (3.5x4.5)
Inombolo enkulu yomkhiqizo 74CB3Q3245

Isingeniso Somkhiqizo

I-SN74CB3Q3245 iyiswishi yebhasi ye-FET enomkhawulokudonsa ophezulu esebenzisa iphampu yokushaja ukuphakamisa ugesi wesango le-pass transistor, ihlinzeka ukumelana okuphansi nokuphansi kwe-ON-state (ron).Ukumelana nesimo se-ON-state okuphansi nokuyisicaba kuvumela ukubambezeleka okuncane kokusakazeka futhi kusekela ukushintshwa kwesitimela ukuya kusitimela kumachweba okufakwayo/okuphumayo kwedatha (I/O).Idivayisi iphinde ibe nomthamo wedatha ye-I/O ephansi ukunciphisa ukulayisha okunamandla kanye nokuhlanekezelwa kwesignali ebhasini ledatha.Idizayinelwe ngokuqondile ukusekela izinhlelo zokusebenza ezinomkhawulokudonsa ophezulu, i-SN74CB3Q3245 inikeza isixazululo esibonakalayo esilungiselelwe kahle esilungele ukuxhumana kwe-broadband, amanethiwekhi, kanye nezinhlelo zekhompuyutha ezidinga idatha.

I-SN74CB3Q3245 ihlelwe njengeswishi yebhasi engu-8-bit enokufakwayo okukodwa kokukhipha amandla (OE\).Uma i-OE\ iphansi, iswishi yebhasi IVULIWE futhi imbobo engu-A ixhunywe embobeni engu-B, okuvumela ukugeleza kwedatha eqondiswa kabili phakathi kwezimbobo.Uma i-OE\ iphakeme, iswishi yebhasi IVALIWE futhi kukhona isimo sokuvinjelwa okuphezulu phakathi kwezimbobo A kanye no-B.

Le divayisi icaciswe ngokugcwele kuzinhlelo zokusebenza zokwehlisa amandla kancane ezisebenzisa i-Ioff.I-Ioff circuitry ivimbela ukugeleza emuva kwamanje okulimazayo ngocingo lapho inikwe amandla.Idivayisi inokuhlukaniswa ngesikhathi sokucisha amandla.

Ukuqinisekisa isimo se-impedance ephezulu ngesikhathi sokukhushulwa kwamandla noma ukwehla kwamandla, i-OE\ kufanele iboshwe ku-VCC ngesixhasi sokudonsa;inani elincane le-resistor linqunywa ikhono lamanje lokucwila lomshayeli.

Izici Zomkhiqizo

  • Umzila Wedatha Womkhawulokudonsa Omkhulu (Kufika ku-500 MHz↑)
  • Ilingana ne-IDTQS3VH384 Idivayisi
  • I-5-V I-Tolerant I/Os enedivayisi enikwe amandla phezulu noma i-Powered-Down
  • Izici Zokumelana Nesimo Esiphansi Nesicaba (iron) Ngaphezu Kwebanga Lokusebenza (ron = 4ΩOkuvamile)
  • Ukushintsha Umzila Wesitimela Uya Kujantshi Kumachweba Wedatha I/OUkugeleza Kwedatha Okuqondisiwe, Ngokubambezeleka Kokusabalalisa Okuseduze NoziroAmandla Okufaka Okuphansi/Okukhiphayo Anciphisa Ukulayisha Nokuhlanekezelwa Kwesiginali (Cio(OFF) = 3.5 pF Okujwayelekile)
    • 0- kuya ku-5-V Ukushintsha Nge-3.3-V VCC
    • 0- kuya ku-3.3-V Ukushintsha Nge-2.5-V VCC
  • Imvamisa Yokushintsha Ngokushesha (fOE\ = 20 MHz Max)
  • Okokufaka Kwedatha Nokulawula Kuhlinzeka Ngama-Undershoot Clamp Diode
  • Ukusetshenziswa kwamandla okuphansi (ICC = 1 mA Okujwayelekile)
  • Ibanga Lokusebenza le-VCC Ukusuka ku-2.3 V kuye ku-3.6 V
  • Idatha I/Os Isekela 0 kuya ku-5-V Amazinga Ophawu (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Okokufaka Kokulawula Kungashayelwa i-TTL noma 5-V/3.3-V CMOS Outputs
  • I-Ioff Isekela Ukusebenza Kwemodi Eyingxenye Yamandla-Down
  • Ukusebenza Kwe-Latch-Up Kudlula 100 mA I-JESD 78, Isigaba II
  • Ukusebenza Kwe-ESD Kuhlolwe Ngokwe-JESD 22Isekela Kokubili Izicelo Zedijithali ne-Analog: I-PCI Interface, I-Differential Signal Interface, I-Memory Interleaving, I-Bus Isolation, I-Low-Distortion Signal Gating
    • 2000-V Imodeli Yomzimba Womuntu (A114-B, Isigaba II)
    • 1000-V Imodeli Yedivayisi Eshajiwe (C101)

Izinzuzo Zomkhiqizo

- ukuphathwa okushisayo nokuvikelwa kwe-overvoltage
Ukuphatha okushisayo kungenye inselelo enkulu kubaklami beshaja yebhethri.Yonke i-chip yeshaja yehla ugesi phakathi nenqubo yokushaja ngenxa yokukhishwa kokushisa.Ukuze ugweme ukulimala kwebhethri noma ukucisha kwesistimu, amashaja amaningi ahlanganisa indlela ethile yokulawula ukulawula ukunqwabelana kokushisa.Amadivayisi amasha asebenzisa amasu empendulo athuthuke kakhulu ukuze ahlole ngokuqhubekayo izinga lokushisa lokufa futhi alungise inkokhiso yamanje ngokushintshashintsha noma ngokubala ngesilinganiso esilinganiselwe noshintsho kuzinga lokushisa elizungezile.Lobu buhlakani obakhelwe ngaphakathi buvumela i-chip yeshaja yamanje ukuthi yehlise kancane kancane amandla amanje okushaja kuze kube yilapho kufinyelelwa khona ukulingana nezinga lokushisa elishisayo liyeka ukunyuka.Lobu buchwepheshe buvumela ishaja ukuthi iqhubeke nokushaja ibhethri ngobuningi obunokwenzeka bamanje ngaphandle kokubangela ukuthi uhlelo luvaleke, ngaleyo ndlela kunciphe isikhathi sokushajwa kwebhethri.Amadivayisi amaningi amasha namuhla nawo azongeza indlela yokuvikela i-overvoltage.
Ishaja i-BQ25616JRTWRihlinzeka ngezici ezihlukahlukene zokuphepha zokushajwa kwebhethri nokusebenza kwesistimu, okuhlanganisa ukuqapha kwe-thermistor ye-thermistor engalungile yebhethri, ukushaja isibali-sikhathi sokuphepha kanye nokugcwala ngokweqile nokuvikelwa kwamanje.Ukulawula okushisayo kunciphisa amandla amanje lapho izinga lokushisa lokuhlangana lingaphezu kuka-110°C.Okukhiphayo kwe-STAT kubika isimo sokushaja nanoma yiziphi izimo zephutha.

Izimo zohlelo lokusebenza

I-chip yeshaja yebhethri ingeyohlobo lwe-chip yokuphatha amandla, uhla lohlelo lokusebenza lubanzi kakhulu.Ukuthuthukiswa kwama-chips okuphatha amandla kubalulekile ekuthuthukiseni ukusebenza komshini wonke, ukukhethwa kwama-chips okuphatha amandla kuhlobene ngokuqondile nezidingo zesistimu, kuyilapho ukuthuthukiswa kwama-chips okuphatha amandla edijithali kusadingeka ukuwela umgoqo wezindleko.
I-BQ25616/616J ididiyelwe kakhulu lokuphathwa kwebhethri yemodi yokushintsha engu-3-A kanye nedivayisi yokulawula indlela yamandla esistimu yebhethri ye-Li-Ion eyodwa kanye ne-Li-polymer.Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), i-FET eshintshayo ohlangothini oluphezulu (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu ne ibhethri.Indlela yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.
I-BQ25616/616J ididiyelwe kakhulu yokuphatha ukushajwa kwebhethri yemodi yokushintsha engu-3-A kanye nedivayisi yokulawula Indlela Yamandla yesistimu yamabhethri e-Li-ion ne-Li-polymer.Ifaka ukushaja okusheshayo ngosekelo lwamandla kagesi okufakwayo aphezulu ezinhlobonhlobo zezinhlelo zokusebenza ezihlanganisa izipikha, izimboni, nemishini ephathekayo yezokwelapha.Indlela yayo yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri, futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.I-voltage yayo yokufaka kanye nokulawula kwamanje kuletha amandla aphezulu wokushaja ebhethrini.
Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), i-FET eshintshayo ohlangothini oluphezulu (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu ne ibhethri.Iphinde ihlanganise i-bootstrap diode ye-high-side gate drive yokuklama uhlelo olulula.Isilungiselelo sezingxenyekazi zekhompuyutha kanye nombiko wesimo kunikeza ukumisa okulula ukuze usethe isisombululo sokushaja.

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