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I-AQX IRF7416TRPBF I-Circuit ic chip entsha neyangempela ehlanganisiwe IRF7416TRPBF

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Imininingwane Yomkhiqizo

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Izimfanelo Zomkhiqizo

UHLOBO DESCRIPTION
Isigaba Imikhiqizo ye-Discrete Semiconductor

Ama-Transistors - ama-FET, ama-MOSFET - Awodwa

Mfr I-Infineon Technologies
Uchungechunge I-HEXFET®
Iphakheji I-Tape & Reel (TR)

Cut Tape (CT)

I-Digi-Reel®

Isimo somkhiqizo Iyasebenza
Uhlobo lwe-FET Isiteshi se-P
Ubuchwepheshe I-MOSFET (Metal oxide)
I-Drain to Source Voltage (Vdss) 30 v
Okwamanje – Ukudonsa Okuqhubekayo (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
I-Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V
Vgs(th) (Ubukhulu) @ Id 1V @ 250µA
Ukushaja kwesango (Qg) (Ubukhulu) @ Vgs 92 nC @ 10 V
I-Vgs (Ubuningi) ±20V
Amandla Wokufaka (Ciss) (Ubukhulu) @ Vds 1700 pF @ 25 V
Isici se-FET -
Ukuchithwa kwamandla (Ubukhulu) 2.5W (Ta)
Izinga Lokushisa Lokusebenza -55°C ~ 150°C (TJ)
Uhlobo Lokukhweza INtaba Engaphezulu
Iphakheji Yedivayisi Yomhlinzeki 8-SO
Iphakheji / Ikesi 8-SOIC (0.154″, 3.90mm Ububanzi)
Inombolo Yomkhiqizo Eyisisekelo IRF7416

Amadokhumenti Nemidiya

UHLOBO LOKUSEBENZA LINK
Datasheets I-IRF7416PbF
Eminye Imibhalo Ehlobene Isistimu Yokubala Ingxenye ye-IR
Amamojula Wokuqeqesha Umkhiqizo Amasekhethi Ahlanganisiwe Anamandla Kagesi Aphezulu (Abashayeli Besango Be-HVIC)

I-Discrete Power MOSFETs 40V nangaphansi

Umkhiqizo Ofakiwe Amasistimu Wokucubungula Idatha
I-HTML Datasheet I-IRF7416PbF
Amamodeli we-EDA I-IRF7416TRPBF ngu-Ultra Librarian
Amamodeli Wokulingisa Idatha ye-IRF7416PBF

Izigaba Zemvelo Nokuthekelisa

ISIQINISEKISO DESCRIPTION
Isimo se-RoHS I-ROHS3 Iyahambisana
Izinga Lokuzwela Komswakama (MSL) 1 (Okungenamkhawulo)
FIKA Isimo FIKA Ungathintekile
ECCN I-EAR99
HTSUS 8541.29.0095

Izinsiza Ezengeziwe

ISIQINISEKISO DESCRIPTION
Amanye Amagama I-IRF7416TRPBFDKR

SP001554262

Idatha ye-IRF7416TRPBFCT

I-IRF7416TRPBF-ND

Idatha ye-IRF7416TRPBFTR

Iphakheji Elijwayelekile 4,000

IRF7416

Izinzuzo
Isakhiwo seseli ye-Planar ye-SOA ebanzi
Ilungiselelwe ukutholakala okubanzi okuvela kozakwethu bokusabalalisa
Ukufaneleka komkhiqizo ngokwezinga le-JEDEC
I-Silicon ilungiselelwe izinhlelo zokusebenza ezishintsha ngaphansi kuka-<100KHz
Iphakethe lamandla elisezingeni eliphezulu lembonini
Iyakwazi ukuthengiswa ngamagagasi
-30V Single P-Channel HEXFET Power MOSFET kuphakheji SO-8
Izinzuzo
I-RoHS Iyahambisana
I-RDS ephansi (ivuliwe)
Ikhwalithi ehamba phambili embonini
Isilinganiso se-Dv/dt esinamandla
Ukushintsha Ngokushesha
I-Avalanche Ngokugcwele Ikalwe
175°C Izinga Lokushisa Ezisebenzayo
I-P-Channel MOSFET

I-Transistor

I-transistor iyi-aidivayisi ye-semiconductorwawuvamisekhulisanomashintshaamasignali kagesi kanyeamandla.I-transistor ingenye yezakhiwo eziyisisekelo zesimanjeelectronics.[1]Yakhiwaimpahla ye-semiconductor, ngokuvamile nabathathuamatheminaliukuze kuxhunywe isekethe ye-elekthronikhi.Ai-voltagenomaokwamanjeesetshenziswa kupheya eyodwa yamatheminali e-transistor ilawula i-current ngenye ipheya yamatheminali.Ngenxa yokuthi amandla alawulwayo (okukhiphayo) angaba phezulu kunamandla okulawula (okokufaka), i-transistor ingakhulisa isignali.Amanye ama-transistors apakishwa ngawodwana, kodwa amaningi atholakala eshumekwe kuwoizifunda ezihlanganisiwe.

I-Austria-Hungary isazi sesayensi yemvelo UJulius Edgar Lilienfelduphakamise umqondo wokuthi ai-transistor ye-field-effectngo-1926, kodwa kwakungenakwenzeka ukwakha idivayisi esebenzayo ngaleso sikhathi.[2]Umshini wokuqala osebenzayo owawuzokwakhiwa kwakuyi-i-point-contact transistoryasungulwa ngo-1947 yizazi zefiziksi zaseMelikaUJohn BardeenfuthiWalter Brattainngenkathi usebenza ngaphansiUWilliam ShockleykweBell Labs.Bobathathu bahlanganyela ngo-1956Umklomelo KaNobel kuPhysicsimpumelelo yabo.[3]Uhlobo olusetshenziswa kakhulu lwe-transistor yi-metal-oxide-semiconductor field-effect transistor(MOSFET), eyasungulwa nguMohamed AtallafuthiDawon KahngeBell Labs ngo-1959.[4][5][6]Ama-Transistors aguqule umkhakha we-electronics, futhi avula indlela encane futhi eshibhileimisakazo,izibali, futhiamakhompyutha, phakathi kwezinye izinto.

Ama-transistors amaningi enziwe ahlanzekile kakhului-silicon, futhi abanye kusukelai-germanium, kodwa ngezinye izikhathi kusetshenziswa ezinye izinto ze-semiconductor.I-transistor ingaba nohlobo olulodwa kuphela lwesithwali sokushaja, ku-transistor enemiphumela yasendle, noma ingaba nezinhlobo ezimbili zezinkampani zokushajai-bipolar junction transistoramadivaysi.Uma kuqhathaniswa nei-vacuum tube, ama-transistors ngokuvamile mancane futhi adinga amandla amancane ukuze asebenze.Amashubhu athile evacuum anezinzuzo ngaphezu kwama-transistors kumaza okusebenza aphezulu kakhulu noma ama-voltage aphezulu okusebenza.Izinhlobo eziningi zama-transistors zenziwa ekucacisweni okujwayelekile ngabakhiqizi abaningi.


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