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imikhiqizo

I-BQ25616JRTWR Okusha&Okwangempela kwe-TI IC Chip intengo enhle I-Electronics Component Esitokweni

incazelo emfushane:

Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), i-FET eshintshayo ohlangothini oluphezulu (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu ne ibhethri.Iphinde ihlanganise i-bootstrap diode ye-high-side gate drive yokuklama uhlelo olulula.Isilungiselelo sezingxenyekazi zekhompuyutha kanye nombiko wesimo kunikeza ukumisa okulula ukuze usethe isisombululo sokushaja.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izimfanelo Zomkhiqizo

UHLOBO

DESCRIPTION

Isigaba

Izifunda Ezihlanganisiwe (ICs)

I-PMIC - Amashaja Ebhethri

Mfr

Texas Instruments

Uchungechunge

-

Iphakheji

I-Tape & Reel (TR)

Cut Tape (CT)

I-Digi-Reel®

SPQ

250 |I-T&R

Isimo Sengxenye

Iyasebenza

I-Battery Chemistry

I-Lithium Ion/Polymer

Inombolo Yamaseli

1

Okwamanje - Iyashaja

Okuqhubekayo - Kuyahleleka

Izici Ezihlelekayo

Okwamanje

Ukuvikelwa Kwephutha

Ngaphezulu Kwamanje, I-Over Voltage

Inkokhelo yamanje - Max

3A

Ibhethri Pack Voltage

4.35V

I-Voltage - Supply (Ubukhulu)

13.5V

Isixhumi esibonakalayo

I-USB

Izinga Lokushisa Lokusebenza

-40°C ~ 85°C (TA)

Uhlobo Lokukhweza

INtaba Engaphezulu

Iphakheji / Ikesi

24-WFQFN Iphedi Eveziwe

Iphakheji Yedivayisi Yomhlinzeki

24-WQFN (4x4)

Inombolo Yomkhiqizo Eyisisekelo

I-BQ25616

Isingeniso Somkhiqizo

I-chip yeshaja yebhethri iyi-chip engakwazi ukushaja futhi ilawule amabhethri amaningi, kusukela kubhethri elilodwa le-lithium, ibhethri elilodwa le-lithium iron phosphate, noma amabhethri e-NiMH amabili kuya kwamane.

Izici Zomkhiqizo

● Ibhethri ingashajwa ngesixhumi esibonakalayo se-USB noma i-adaptha ye-AC
● On-chip power transistors
● Ukunemba njalo njalo kwamanje kokunqanyulwa kwamandla kagesi okungu-1%
● Isekethe yokuguqula ye-analog-to-digital yangaphakathi ingalungisa ngokuzenzakalelayo amandla okushaja ngokuya nekhono lamanje lokuphumayo lomthombo we-voltage wokufaka.
● Ibhethri lingashajwa emithonjeni yamandla kagesi enamandla okukhipha amandla amanje alinganiselwe njengamaphaneli elanga
● Imodi yokushaja yamanje ephansi uma ibhethri iphansi
● Ukushaja okuqhubekayo okusethezeka komsebenzisi okungafika ku-600ma
●Ukushaja kwemodi yokushisa eqhubekayo yamanje/ehlala njalo ukukhulisa ukushaja kwamanje futhi kuvimbele ukushisisa kwe-chip
● Imodi yokulala yamandla aphansi lapho i-voltage yokuphakela amandla yehla
●Okukhiphayo kwenkomba yesimo kungashayelwa i-led noma ixhunywe ngesilawuli esincane
● Ukushaja kabusha okuzenzakalelayo
● Umsebenzi wokuqapha izinga lokushisa kwebhethri
● Umkhiqizo ongenamthofu

Izinzuzo Zomkhiqizo

- ukuphathwa okushisayo nokuvikelwa kwe-overvoltage
Ukuphatha okushisayo kungenye inselelo enkulu kubaklami beshaja yebhethri.Yonke i-chip yeshaja yehla ugesi phakathi nenqubo yokushaja ngenxa yokukhishwa kokushisa.Ukuze ugweme ukulimala kwebhethri noma ukucisha kwesistimu, amashaja amaningi ahlanganisa indlela ethile yokulawula ukulawula ukunqwabelana kokushisa.Amadivayisi amasha asebenzisa amasu empendulo athuthuke kakhulu ukuze ahlole ngokuqhubekayo izinga lokushisa lokufa futhi alungise inkokhiso yamanje ngokushintshashintsha noma ngokubala ngesilinganiso esilinganiselwe noshintsho kuzinga lokushisa elizungezile.Lobu buhlakani obakhelwe ngaphakathi buvumela i-chip yeshaja yamanje ukuthi yehlise kancane kancane amandla amanje okushaja kuze kube yilapho kufinyelelwa khona ukulingana nezinga lokushisa elishisayo liyeka ukunyuka.Lobu buchwepheshe buvumela ishaja ukuthi iqhubeke nokushaja ibhethri ngobuningi obunokwenzeka bamanje ngaphandle kokubangela ukuthi uhlelo luvaleke, ngaleyo ndlela kunciphe isikhathi sokushajwa kwebhethri.Amadivayisi amaningi amasha namuhla nawo azongeza indlela yokuvikela i-overvoltage.
Ishaja i-BQ25616JRTWRihlinzeka ngezici ezihlukahlukene zokuphepha zokushajwa kwebhethri nokusebenza kwesistimu, okuhlanganisa ukuqapha kwe-thermistor ye-thermistor engalungile yebhethri, ukushaja isibali-sikhathi sokuphepha kanye nokugcwala ngokweqile nokuvikelwa kwamanje.Ukulawula okushisayo kunciphisa amandla amanje lapho izinga lokushisa lokuhlangana lingaphezu kuka-110°C.Okukhiphayo kwe-STAT kubika isimo sokushaja nanoma yiziphi izimo zephutha.

Izimo zohlelo lokusebenza

I-chip yeshaja yebhethri ingeyohlobo lwe-chip yokuphatha amandla, uhla lohlelo lokusebenza lubanzi kakhulu.Ukuthuthukiswa kwama-chips okuphatha amandla kubalulekile ekuthuthukiseni ukusebenza komshini wonke, ukukhethwa kwama-chips okuphatha amandla kuhlobene ngokuqondile nezidingo zesistimu, kuyilapho ukuthuthukiswa kwama-chips okuphatha amandla edijithali kusadingeka ukuwela umgoqo wezindleko.
I-BQ25616/616J ididiyelwe kakhulu lokuphathwa kwebhethri yemodi yokushintsha engu-3-A kanye nedivayisi yokulawula indlela yamandla esistimu yebhethri ye-Li-Ion eyodwa kanye ne-Li-polymer.Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), i-FET eshintshayo ohlangothini oluphezulu (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu ne ibhethri.Indlela yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.
I-BQ25616/616J ididiyelwe kakhulu yokuphatha ukushajwa kwebhethri yemodi yokushintsha engu-3-A kanye nedivayisi yokulawula Indlela Yamandla yesistimu yamabhethri e-Li-ion ne-Li-polymer.Ifaka ukushaja okusheshayo ngosekelo lwamandla kagesi okufakwayo aphezulu ezinhlobonhlobo zezinhlelo zokusebenza ezihlanganisa izipikha, izimboni, nemishini ephathekayo yezokwelapha.Indlela yayo yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri, futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.I-voltage yayo yokufaka kanye nokulawula kwamanje kuletha amandla aphezulu wokushaja ebhethrini.
Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), i-FET eshintshayo ohlangothini oluphezulu (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu ne ibhethri.Iphinde ihlanganise i-bootstrap diode ye-high-side gate drive yokuklama uhlelo olulula.Isilungiselelo sezingxenyekazi zekhompuyutha kanye nombiko wesimo kunikeza ukumisa okulula ukuze usethe isisombululo sokushaja.


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