I-Merrill chip Entsha & Eyoqobo ezingxenyeni ze-elekthronikhi edidiyelwe isekethe IC IRFB4110PBF
Izimfanelo Zomkhiqizo
| UHLOBO | DESCRIPTION |
| Isigaba | Imikhiqizo ye-Discrete Semiconductor |
| Mfr | I-Infineon Technologies |
| Uchungechunge | I-HEXFET® |
| Iphakheji | Ithubhu |
| Isimo somkhiqizo | Iyasebenza |
| Uhlobo lwe-FET | Isiteshi se-N |
| Ubuchwepheshe | I-MOSFET (Metal oxide) |
| I-Drain to Source Voltage (Vdss) | 100 V |
| Okwamanje – Ukudonsa Okuqhubekayo (Id) @ 25°C | I-120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| I-Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| Vgs(th) (Ubukhulu) @ Id | 4V @ 250µA |
| Ukushaja kwesango (Qg) (Ubukhulu) @ Vgs | 210 nC @ 10 V |
| I-Vgs (Ubuningi) | ±20V |
| Amandla Wokufaka (Ciss) (Ubukhulu) @ Vds | 9620 pF @ 50 V |
| Isici se-FET | - |
| Ukuchithwa kwamandla (Ubukhulu) | 370W (Tc) |
| Izinga Lokushisa Lokusebenza | -55°C ~ 175°C (TJ) |
| Uhlobo Lokukhweza | NgeHole |
| Iphakheji Yedivayisi Yomhlinzeki | TO-220AB |
| Iphakheji / Ikesi | KUYA-220-3 |
| Inombolo Yomkhiqizo Eyisisekelo | I-IRFB4110 |
Amadokhumenti Nemidiya
| UHLOBO LOKUSEBENZA | LINK |
| Datasheets | I-IRFB4110PbF |
| Eminye Imibhalo Ehlobene | Isistimu Yokubala Ingxenye ye-IR |
| Amamojula Wokuqeqesha Umkhiqizo | Amasekhethi Ahlanganisiwe Anamandla Kagesi Aphezulu (Abashayeli Besango Be-HVIC) |
| Umkhiqizo Ofakiwe | Amarobhothi kanye Nezimoto Eziqondiswayo Ezizenzakalelayo (AGV) |
| I-HTML Datasheet | I-IRFB4110PbF |
| Amamodeli we-EDA | I-IRFB4110PBF ye-SnapEDA |
| Amamodeli Wokulingisa | Idatha ye-IRFB4110PBF |
Izigaba Zemvelo Nokuthekelisa
| ISIQINISEKISO | DESCRIPTION |
| Isimo se-RoHS | I-ROHS3 Iyahambisana |
| Izinga Lokuzwela Komswakama (MSL) | 1 (Okungenamkhawulo) |
| FIKA Isimo | FIKA Ungathintekile |
| ECCN | I-EAR99 |
| HTSUS | 8541.29.0095 |
Izinsiza Ezengeziwe
| ISIQINISEKISO | DESCRIPTION |
| Amanye Amagama | 64-0076PBF-ND 64-0076PBF SP001570598 |
| Iphakheji Elijwayelekile | 50 |
Umndeni we-Strong IRFET™ we-MOSFET we-MOSFET uthuthukiselwe i-RDS(on) ephansi kanye nekhono eliphezulu lamanje.Amadivayisi alungele izinhlelo zokusebenza zefrikhwensi ephansi ezidinga ukusebenza nokuma.Iphothifoliyo ebanzi ikhuluma ngezinhlelo zokusebenza eziningi ezihlanganisa ama-DC motors, amasistimu okuphatha amabhethri, ama-inverter, neziguquli ze-DC-DC.
Isifinyezo Sezici
Iphakethe lamandla embobo ajwayelekile embonini
Isilinganiso esiphezulu samanje
Ukufaneleka komkhiqizo ngokwezinga le-JEDEC
I-Silicon ilungiselelwe izinhlelo zokusebenza ezishintsha ngaphansi kuka-<100 kHz
I-body-diode ethambile uma iqhathaniswa nokukhiqizwa kwe-silicon yangaphambilini
Iphothifoliyo ebanzi iyatholakala
Izinzuzo
I-pinout evamile ivumela ukwehla kokumiselela
Iphakheji yekhono lokuphatha lamanje eliphezulu
Izinga lemfundo elisezingeni lemboni
Ukusebenza okuphezulu kuzinhlelo zokusebenza zefrikhwensi ephansi
Ukuminyana kwamandla okwandisiwe
Inikeza abaklami ukuvumelana nezimo ekukhetheni idivayisi efanelekile kakhulu yohlelo lwabo lokusebenza
I-Parametrics
| Amapharamitha | I-IRFB4110 |
| Intengo Yebhajethi €/1k | 1.99 |
| I-ID (@25°C) ubuningi | 180 A |
| Ukukhweza | I-THT |
| Izinga Lokushisa Lokusebenza liphansi kakhulu | -55 °C 175 °C |
| I-Ptot max | 370 W |
| Iphakheji | KUYA-220 |
| I-polarity | N |
| I-QG (thayipha @10V) | 150 nC |
| Qgd | 43 nc |
| I-RDS (ivuliwe) (@10V) ubuningi | 4.5 mΩ |
| Ubukhulu be-RthJC | 0.4 K/W |
| Tj max | 175 °C |
| Ubukhulu be-VDS | 100 V |
| I-VGS(th) iminithi ubuningi | 3 V 2 V 4 V |
| Ubukhulu be-VGS | 20 V |
Imikhiqizo ye-Discrete Semiconductor
Imikhiqizo ehlukanisiwe ye-semiconductor ihlanganisa ama-transistors angawodwana, ama-diode, nama-thyristors, kanye nezinhlu ezincane ezinjalo ezakhiwe ngamadivaysi amabili, amathathu, amane, noma enye inombolo encane yamadivayisi afanayo ngaphakathi kwephakheji elilodwa.Avame ukusetshenziselwa ukwakha amasekhethi ane-voltage enkulu noma ingcindezi yamanje, noma ukuthola imisebenzi yesekethe eyisisekelo.
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