STF13N80K5 Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube

I-EU RoHS

Ithobelana Nokukhululwa

I-ECCN (US)

I-EAR99

Isimo Sengxenye

Iyasebenza

I-HTS

8541.29.00.95

I-SVHC

Yebo

I-SVHC Yeqa I-Threshold

Yebo

Ezezimoto

No

I-PPAP

No

Isigaba somkhiqizo

Amandla MOSFET

Ukucushwa

Awushadile

Ubuchwepheshe Benqubo

I-SuperMESH

Imodi yesiteshi

Ukuthuthukisa

Uhlobo Lwesiteshi

N

Inombolo Yezinto Nge-Chip ngayinye

1

I-Maximum Drain Source Voltage (V)

800

I-Maximum Gate Source Voltage (V)

±30

I-Maximum Gate Threshold Voltage (V)

5

Izinga lokushisa le-Operating Junction (°C)

- 55 kuya ku-150

I-Maximum Continuous Drin Current (A)

12

Umthombo Wesango Eliphezulu Lokuvuza Kwamanje (nA)

10000

I-IDSS enkulu (uA)

1

I-Maximum Drain Source Resistance (mOhm)

450@10V

Inkokhelo Yesango Ejwayelekile @ Vgs (nC)

27@10V

Ukushaja Kwesango Okujwayelekile @ 10V (nC)

27

Amandla Okufaka Ajwayelekile @ Vds (pF)

870@100V

Ukukhipha Amandla Okukhulu (mW)

35000

Isikhathi Esijwayelekile Sokuwa (ns)

16

Isikhathi Esijwayelekile Sokuvuka (ns)

16

Isikhathi Esijwayelekile Sokubambezeleka Kokuvala (ns)

42

Isikhathi Esivamile Sokulibala Sokuvula (ns)

16

Izinga Lokushisa Eliphansi Lokusebenza (°C)

-55

Izinga Lokushisa Eziphezulu Ezisebenzayo (°C)

150

Supplier Temperature Grade

Izimboni

Ukupakisha

Ithubhu

I-Maximum Positive Gate Source Voltage (V)

30

I-Maximum Diode Forward Voltage (V)

1.5

Ukukhweza

NgeHole

Ukuphakama Kwephakheji

16.4(Ubukhulu)

Ububanzi Bephakheji

4.6(Ubukhulu)

Ubude Bephakheji

10.4(Ubukhulu)

I-PCB ishintshile

3

Ithebhu

Ithebhu

Igama Lephakheji Elijwayelekile

TO

Iphakheji Lomhlinzeki

TO-220FP

I-Pin Bala

3

Umumo Wokuhola

NgeHole