UC2843BD1013TR ic chip integrated circuits electronics semiconductor brand new and original one spot buy

1.I-LDO, noma isilawuli esiphansi sokuyeka ukuphuma, isilawuli somugqa sokuyeka esiphansi esisebenzisa i-transistor noma ishubhu lomphumela wenkundla (FET) elisebenza endaweni yaso yokukhipha amandla ukuze likhiphe i-voltage eyeqile ku-voltage yokufaka esetshenzisiwe ukuze kukhiqizwe i-voltage ephumayo elawulwayo.
Izinto ezine eziyinhloko yi-Dropout, Noise, Power Supply Rejection Ratio (PSRR), kanye ne-Quiscent Current Iq.
Izingxenye eziyinhloko: isekethe yokuqala, iyunithi yokuchema yomthombo wamanje engaguquki, isekethe evumelayo, isici sokulungisa, umthombo wereferensi, isikhulisi samaphutha, inethiwekhi yokumelana nempendulo kanye nesekhethi yokuvikela, njll.

2.Isimiso sokusebenza
Isifunda esiyisisekelo se-LDO siqukethe isilawuli se-VT sochungechunge, izihluthulelo zesampula i-R1 ne-R2, kanye ne-amplifier yokuqhathanisa A.
Isistimu inikwe amandla, uma iphinikhodi yokunika amandla isezingeni eliphezulu, umjikelezo uyaqala, isifunda somthombo wamanje esihlala sikhona sinikeza ukuchema kuyo yonke isekethe, i-voltage yomthombo wereferensi isungulwa ngokushesha, futhi i-voltage yokufaka engalawulwa isetshenziswa njenge-voltage. kokunikezwa kwamandla, i-voltage eyireferensi isetshenziswa njenge-voltage yesigaba esingesihle se-amplifier yephutha, inethiwekhi yempendulo ye-resistor ihlukanisa i-voltage ephumayo futhi ithola i-voltage yempendulo, le voltage yempendulo ifaka endaweni efanayo yesiqhathanisi samaphutha, kanye nenegethivu Le voltage yempendulo ifaka ohlangothini lwe-isotropic lwesiqhathanisi sephutha futhi iqhathaniswa ne-voltage eyireferensi engalungile.Umehluko phakathi kwama-voltages amabili ukhuliswa yi-amplifier yephutha ukuze ulawule ngokuqondile isango lesici sokulungiswa kwamandla, futhi ukukhishwa kwe-LDO kulawulwa ngokushintsha isimo sokuqhuba ishubhu yokulungisa, okungukuthi i-Vout = (R1 + R2)/ I-R2 × Isif
Isilawuli somugqa sangempela sokuphuma esiphansi sineminye imisebenzi efana nokuvikela isekethe emfushane yokulayisha, ukuvala shaqa kwe-overvoltage, ukuvala shaqa okushisayo, ukuvikela ukuhlehla kokuxhumeka, njll.

3.Izinzuzo, ukungalungi, nesimo samanje
Izilawuli zomugqa ze-Low Dropout Voltage (LDO) ziyizindleko eziphansi, umsindo ophansi, amandla athule aphansi, izingxenye zangaphandle ezimbalwa, ngokuvamile i-bypass capacitor eyodwa noma ezimbili, futhi zinomsindo ophansi kakhulu kanye ne-Power Supply Rejection Ratio (PSRR).I-LDO iyiSistimu encane ku-Chip (SoC) enokuzisebenzisa okuphansi kakhulu.Ingasetshenziselwa ukulawulwa kwesiteshi esikhulu samanje futhi inamasekhethi ezingxenyekazi zekhompuyutha adidiyelwe njengama-MOSFET ane-in-line ukumelana okuphansi kakhulu, ama-Schottky diode, ama-resistors amasampula, nama-voltage dividers, kanye nokuvikela okungaphezu kwamanje, ukuvikela izinga lokushisa elingaphezu kwamandla, Imithombo yereferensi enembile, izikhulisa-msindo ezihlukile, izilibazisi, njll. I-PG isizukulwane esisha se-LDO esizihlola ngokwakho isimo ngasinye sokukhiphayo kanye nokubambezeleka kokunikezwa kwamandla okuphephile, okungaphinde kubizwe ngokuthi Amandla Alungile, okungukuthi "amandla amahle noma azinzile" .Ama-LDO amaningi adinga i-capacitor eyodwa kuphela kokokufaka kanye neyodwa ekuphumeni ukuze kusebenze okuzinzile.
Ama-LDO amasha angakwazi ukufeza ukucaciswa okulandelayo: umsindo ophumayo ongu-30µV, i-PSRR ka-60dB, i-quocent current engu-6µA, kanye nokwehla kwamandla kagesi okungu-100mV kuphela.Isizathu esiyinhloko salokhu kusebenza okuthuthukisiwe kwezilawuli zomugqa we-LDO ukuthi isilawuli esisetshenzisiwe yi-P-channel MOSFET, eshayelwa yi-voltage futhi ayidingi yamanje, inciphisa amandla amanje asetshenziswa idivayisi ngokwayo kanye nokwehla kwamandla kagesi kuwo wonke.ukwehla kucishe kulingane nomkhiqizo wokuphumayo kanye nokumelana nokumelana.Ukwehla kwamandla kagesi kuyo yonke i-MOSFET kuphansi kakhulu ngenxa yokumelana kwayo okuphansi.Izilawuli zomugqa ezijwayelekile zisebenzisa ama-PNP transistors.Kumasekhethi anama-PNP transistors, ukwehla kwamandla kagesi phakathi kokufaka nokuphumayo akumele kube phansi kakhulu ukuze kuvinjwe i-PNP transistor ukuthi ingene ekugcwalisweni kanye nokunciphisa amandla okukhiphayo.